• DocumentCode
    3518290
  • Title

    Effects of process conditions for the n+-emitter formation in crystalline silicon

  • Author

    Dastgheib-Shirazi, Amir ; Steyer, M. ; Micard, G. ; Wagner, H. ; Altermatt, P. ; Hahn, G.

  • Author_Institution
    Dept. of Phys., Univ. of Konstanz, Konstanz, Germany
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    Nowadays new solar cell concepts are continually attracting the attention of the PV industry. Thereby emitter structures and the application of high performance emitters like the homogeneous and etched-back emitter on crystalline p- and n-type silicon solar cells continue to be very popular [1]-[4]. In this work we study the influence of process parameters on the phosphosilicate glass layer characteristics during the predeposition of a POCl3 diffusion process. The quantitative analysis of the highly doped layer gives a deeper understanding of the phosphorus diffusion process for industrial emitter structures.
  • Keywords
    carrier mobility; elemental semiconductors; phosphosilicate glasses; silicon; solar cells; POCl3; Si; crystalline silicon; diffusion process; etched-back emitter; homogeneous emitter; industrial emitter structure; phosphosilicate glass layer; process conditions; solar cell; Silicon; Emitter; POCl3-Diffusion; PSG; Simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317897
  • Filename
    6317897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3518290