Title :
Sentaurus TCAD for modeling of the elements of the matrix photodetectors on organic compounds
Author :
Kashirskaya, Oxana N.
Author_Institution :
Inst. of Semicond. Phys. SB RAS, Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
The paper presents the results of modeling in TCAD Sentaurus PMOS transistor with a gate length of 7 μm. Current-voltage characteristics are received, as well as the dependence of the breakdown voltage for different values of the thickness of the gate oxide and the depth of the p-n junction. The important electrical parameters of the device were extracted from each of the simulated curve. Given that there is a relationship between technological and electrical parameters [1], it is possible to find characteristics of MOS transistor by varying the parameters of technological process.
Keywords :
MOSFET; organic compounds; p-n junctions; photodetectors; semiconductor device models; technology CAD (electronics); TCAD Sentaurus PMOS transistor modelling; breakdown voltage; current-voltage characteristics; electrical parameter extraction; gate oxide; matrix photodetector; organic compound; p-n junction; size 7 mum; Boron; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage; PMOS transistor; TCAD Sentaurus; the extraction of parameters; the optimization of a technological route;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184482
