Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants.

A comprehensive three-dimensional (3-D) statistical simulation study of the distribution of fractional current change and threshold voltage shifts in real 35 nm bulk MOSFETs due to a single charge trapping at the Si/SiO₂ interface is presented. The devices used in the simulations closely replicate the geometry and the complex doping profile of a real n-channel 35 nm bulk MOSFET developed and published by Toshiba. The simulations are performed at three different gate biases for both low and high drain voltages, subject to random discrete dopant effects. The role of the strategic position where the trapped electron blocks a dominant percolation current path in a device with microscopically different discrete doping configurations is highlighted.