DocumentCode
351845
Title
Characterization of silicon pixel detectors with the n+/n/p+ and double-sided multiguard ring structure before and after neutron-irradiation
Author
Cho, H.S. ; Xie, X.B. ; Chien, C.Y. ; Liang, G.W. ; Huang, W. ; Dezillie, B. ; Eremin, V. ; Li, Z.
Author_Institution
Dept. of Phys. & Astron., Johns Hopkins Univ., Baltimore, MD, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
307
Abstract
The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon pixel detectors with the n+/n/p + and double-sided multiguard ring structure. Electrical characterization of such devices was performed before and after irradiation to neutron fluences (1 MeV equivalent) up to 6×1014 n/cm2, measuring leakage current, potential distribution over the guard rings and full depletion voltage. Studies on the radiation hardness using oxygen-enriched silicon substrates are being presented separately
Keywords
leakage currents; neutron effects; silicon radiation detectors; Si; Si pixel detectors; double-sided multiguard ring structure; leakage current; neutron fluences; neutron-irradiation; oxygen-enriched silicon substrates; potential distribution; radiation-induced damage; radiation-tolerant CMS forward pixel sensors; severe radiation environment; Collision mitigation; Current measurement; Electric variables measurement; Large Hadron Collider; Leakage current; Neutrons; Performance evaluation; Radiation detectors; Sensor phenomena and characterization; Silicon radiation detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location
Seattle, WA
ISSN
1082-3654
Print_ISBN
0-7803-5696-9
Type
conf
DOI
10.1109/NSSMIC.1999.842498
Filename
842498
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