• DocumentCode
    351846
  • Title

    HERA-B detectors with p-spray isolation on the N-side; unirradiated results

  • Author

    Schjølberg-Henriksen, Kari ; Westgaard, Trond ; Sundby Avset, B.

  • Author_Institution
    Dept. of Electron. & Cybernetics, SINTEF, Oslo, Norway
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    312
  • Abstract
    P-spray isolation of double-sided detectors is investigated by computer simulations and measurements on full-size detector prototypes. Simulations showed that boron p-spray implant doses 4.1012, 6.1012, and 8.1012 cm-2 and implant energy 60 keV would yield breakdown voltages above 200 V for unirradiated detectors with oxide charge 2.1011 cm-2 . The simulations showed that the breakdown voltage decreases with increasing p-spray dose. According to the computer simulations, the detectors should perform equally well after irradiation giving an oxide charge of 1.1012 cm-2. HERA-B strip detectors with p-spray isolation were manufactured, using the three simulated doses. The average breakdown voltages and standard deviations were 167±31 V for the 4.1012 cm-2 dose, 151±16 V for the 6.1012 cm-2 dose, and 127±13 V for the 8.1012 cm-2 dose. The measured decrease in breakdown voltage is in good agreement with the computer simulations
  • Keywords
    silicon radiation detectors; HERA-B detectors; Si; boron p-spray implant doses; breakdown voltage; breakdown voltages; double-sided detectors; oxide charge; p-spray isolation; unirradiated results; Avalanche breakdown; Breakdown voltage; Computational modeling; Computer simulation; Detectors; Implants; Silicon; Spraying; Strips; Virtual prototyping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-5696-9
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1999.842499
  • Filename
    842499