Temperature compensated integrated Zener diode with wide range of the operating currents and low temperature coeffcient

Author

Primak, Mikhail A. ; Shestakov, Ivan S. ; Makukha, Vladimir K.

Author_Institution

JS Novosibirsk Plant of Semicond. Devices with Design Bur., Novosibirsk, Russia

fYear

2015

fDate

June 29 2015-July 3 2015

Firstpage

65

Lastpage

68

Abstract

The process of simulation and implementation of the high-accuracy device by using standard CMOS technology is considered in the paper. The selection of the process flow and changes of the standard circuit design are described. Simulation results and measurements of created devices are presented.

Keywords

CMOS integrated circuits; Zener diodes; compensation; integrated circuit design; high-accuracy device; low temperature coefficient; operating currents; process flow; standard CMOS technology; standard circuit design; temperature compensated integrated Zener diode; Integrated circuit modeling; Junctions; Resistance; Semiconductor device modeling; Semiconductor diodes; Simulation; Solid modeling; TCIZD manufacturing technology; construction; temperature compensated integrated Zener diode (TCIZD);

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on

Conference_Location

Erlagol

ISSN

2325-4173

Print_ISBN

978-1-4673-6718-9

Type

conf

DOI

10.1109/EDM.2015.7184489

Filename

7184489