A RF power LDMOS device on SOI

Author

Fiorenza, J.G. ; Del Alamo, J.A. ; Antoniadis, D.A.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

96

Lastpage

97

Abstract

We have fabricated a partially-depleted SOI laterally diffused MOSFET (LDMOSFET) that is designed for use in radio frequency (RF) power amplifiers (PA) for portable applications. The device is fabricated on thin film SIMOX wafers and is suitable for integration with SOI CMOS. A high breakdown voltage is attained using a simple body contact scheme and the RF performance is exceptional.

Keywords

CMOS integrated circuits; SIMOX; electrical contacts; microwave field effect transistors; microwave power amplifiers; power MOSFET; semiconductor device breakdown; semiconductor device reliability; LDMOSFET; RF performance; RF power LDMOS device; SOI; SOI CMOS integration; Si-SiO/sub 2/; body contact scheme; breakdown voltage; partially-depleted SOI laterally diffused MOSFET; portable applications; radio frequency power amplifiers; thin film SIMOX wafers; CMOS technology; Contact resistance; Fabrication; Immune system; Implants; Isolation technology; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819870

Filename

819870