Title :
Effects of Alloy Composition on Multilevel Operation in Self-Heating Phase Change Memories
Author :
Braga, S. ; Pashkov, N. ; Perniola, L. ; Fantini, A. ; Cabrini, A. ; Torelli, G. ; Sousa, V. ; De Salvo, B. ; Reimbold, G.
Author_Institution :
Dept. of Electron., Univ. of Pavia, Pavia, Italy
Abstract :
Although PCM presents good scaling properties, multilevel storage may be required to increase bit density and reduce the cost per bit. The aim of this paper is to evaluate the impact of different phase change (PC) materials based on GST and GeTe on the feasibility of partial-RESET multilevel programming in self-heating device architectures. Through an accurate analysis of electrical and thermal characteristics of these devices, it is demonstrated that GeTeN10% and GST appear to be the best candidates to assure multilevel operation in such architectures.
Keywords :
antimony alloys; germanium alloys; phase change materials; phase change memories; tellurium alloys; Ge2Sb2Te5; PCM; alloy composition effect; multilevel storage; partial-RESET multilevel programming; phase change materials; self-heating device architectures; self-heating phase change memories; thermal characteristics; Computer architecture; Metals; Microprocessors; Phase change materials; Programming; Resistance;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873226
