Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

Author

Rajasekharan, B. ; Salm, C. ; Hueting, R.J.E. ; Hoang, T. ; Schmitz, J.

Author_Institution

Inst. for Nanotechnol., Univ. of Twente, Enschede

fYear

2008

fDate

12-14 March 2008

Firstpage

195

Lastpage

198

Abstract

Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.

Keywords

p-i-n diodes; silicon-on-insulator; transport processes; device scaling; dimensional scaling effects; electronic properties; optoelectronics; p-i-n structures; poly-Si layers; scaled devices; thin silicon on insulator; transport properties; ultrathin body p-i-n diodes; Anodes; Cathodes; P-i-n diodes; PIN photodiodes; Photonic band gap; Plasma confinement; Plasma devices; Plasma properties; Plasma transport processes; Silicon on insulator technology; band gap widening; buried ox ide (BOX); charge plasma (CP) diode; diode; p-i-n diode; quantum confinement; silicon-on-insulator (SOI);

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on

Conference_Location

Udine

Print_ISBN

978-1-4244-1729-2

Electronic_ISBN

978-1-4244-1730-8

Type

conf

DOI

10.1109/ULIS.2008.4527172

Filename

4527172