• DocumentCode
    351856
  • Title

    Radiation damage studies with STAR silicon drift detectors

  • Author

    Bellwied, R. ; Beuttenmueller, R. ; Chen, W. ; Dezillie, B. ; Eremin, V. ; Elliot, D. ; Hoffmann, G.W. ; Huang, W. ; Humanic, T. ; Ilyashenko, I. ; Kotov, I.V. ; Kuczewski, P. ; Leonhard, W. ; Li, Z. ; Lynn, D. ; Pandey, S.U. ; Schambach, J. ; Soja, R. ;

  • Author_Institution
    Wayne State Univ., Detroit, MI, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    396
  • Abstract
    Large (6.3×6.3 cm2) linear silicon drift detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collider. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 1011-1012/cm2, 1 MeV equivalent neutrons and 1010-1012/cm2, 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics
  • Keywords
    drift chambers; neutron detection; neutron effects; nuclear electronics; proton detection; proton effects; silicon radiation detectors; 1 MeV; 24 GeV; C-V characteristics; I-V characteristics; STAR Si drift detectors; Si; diode test structures; electronics; front-end electronics; inner tracking detector; neutron damage; proton damage; radiation damage; reverse bias values; Capacitance-voltage characteristics; Diodes; Laser noise; Life testing; Linearity; Neutrons; Protons; Radiation detectors; Silicon radiation detectors; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-5696-9
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1999.842516
  • Filename
    842516