DocumentCode
351856
Title
Radiation damage studies with STAR silicon drift detectors
Author
Bellwied, R. ; Beuttenmueller, R. ; Chen, W. ; Dezillie, B. ; Eremin, V. ; Elliot, D. ; Hoffmann, G.W. ; Huang, W. ; Humanic, T. ; Ilyashenko, I. ; Kotov, I.V. ; Kuczewski, P. ; Leonhard, W. ; Li, Z. ; Lynn, D. ; Pandey, S.U. ; Schambach, J. ; Soja, R. ;
Author_Institution
Wayne State Univ., Detroit, MI, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
396
Abstract
Large (6.3×6.3 cm2) linear silicon drift detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collider. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 1011-1012/cm2, 1 MeV equivalent neutrons and 1010-1012/cm2, 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics
Keywords
drift chambers; neutron detection; neutron effects; nuclear electronics; proton detection; proton effects; silicon radiation detectors; 1 MeV; 24 GeV; C-V characteristics; I-V characteristics; STAR Si drift detectors; Si; diode test structures; electronics; front-end electronics; inner tracking detector; neutron damage; proton damage; radiation damage; reverse bias values; Capacitance-voltage characteristics; Diodes; Laser noise; Life testing; Linearity; Neutrons; Protons; Radiation detectors; Silicon radiation detectors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location
Seattle, WA
ISSN
1082-3654
Print_ISBN
0-7803-5696-9
Type
conf
DOI
10.1109/NSSMIC.1999.842516
Filename
842516
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