A study of 3D boss structure formation in anisotropic etching of Si (100) in aqueous KOH

Author

Chernov, Artyom S. ; Chebanov, Mikhail A. ; Gridchin, Viktor A. ; Vasilyev, Vladislav Yu ; Byalik, Alexander D.

Author_Institution

RAMIT LLC, Novosibirsk, Russia

fYear

2015

fDate

June 29 2015-July 3 2015

Firstpage

83

Lastpage

86

Abstract

The results of experimental investigation of formation features of the 3D boss with embedded V-groove for the optic fber, comprised in optomechanical part of MOEMS photovoltaic pressure sensor are presented. Dependences of ratio change of length of edges <;110> and <;410> forming underetching compensators of convex corners of the chip have been obtained. To provide good quality of the boss etch, the value of misalignment angle between the mask and silicon wafer primary fat has been defned to be less than 0.5 degrees.

Keywords

compensation; elemental semiconductors; etching; fibre optic sensors; micro-optomechanical devices; microsensors; photodetectors; pressure sensors; silicon; 3D boss structure formation; MOEMS photovoltaic pressure sensor; Si; V-groove; anisotropic etching; micro-optical-electromechanical silicon-based sensor; misalignment angle; optic fiber; silicon wafer mask; underetching compensator; Etching; Optical fiber sensors; Optical fibers; Shape; Silicon; V-groove; anisotropic etching in KOH; boss structure; compensation structures; optical fber; silicon photoelectrical pressure sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on

Conference_Location

Erlagol

ISSN

2325-4173

Print_ISBN

978-1-4673-6718-9

Type

conf

DOI

10.1109/EDM.2015.7184494

Filename

7184494