Physical Modeling and Control of Switching Statistics in PCM Arrays

Author

Calderoni, A. ; Ferro, M. ; Ventrice, D. ; Fantini, P. ; Ielmini, D.

Author_Institution

R&D Technol. Dev., Micron, Milan, Italy

fYear

2011

fDate

22-25 May 2011

Firstpage

1

Lastpage

4

Abstract

An analytical model for multi-phonon thermally activated hopping in the subthreshold conduction of reset-state phase change memory (PCM) devices is developed. The model parameters are calibrated through a statistical/correlation analysis of 45 nm PCM characteristics . Based on Monte Carlo statistical simulations, the model allows to predict the distributions of read currents in the reset state for different programming and drift conditions. The model provides a simple yet physically-accurate tool for for the assessment of variability constraints on PCM technology design.

Keywords

Monte Carlo methods; phase change memories; Monte Carlo statistical simulation; PCM array device; multiphonon thermally-activated hopping; physical modeling; reset-state phase change memory device; statistical-correlation analysis; subthreshold conduction; switching statistics control; Analytical models; Correlation; Phase change materials; Phase change memory; Programming; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2011 3rd IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4577-0225-9

Electronic_ISBN

978-1-4577-0224-2

Type

conf

DOI

10.1109/IMW.2011.5873230

Filename

5873230