DocumentCode :
3518640
Title :
A comparative study of Zn(O,S) buffer layers and CIGS solar cells fabricated by CBD, ALD, and sputtering
Author :
Ramanathan, Kannan ; Mann, Jonathan ; Glynn, Stephen ; Christensen, Steve ; Pankow, Joel ; Li, Jian ; Scharf, John ; Mansfield, Lorelle ; Contreras, Miguel ; Noufi, Rommel
Author_Institution :
Nat. Center for Photovoltaics, Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
2012
fDate :
3-8 June 2012
Abstract :
Zn(O,S) thin films were deposited by chemical bath deposition (CBD), atomic layer deposition, and sputtering. Composition of the films and band gap were measured and found to follow the trends described in the literature. CBD Zn(O,S) parameters were optimized and resulted in an 18.5% efficiency cell that did not require post annealing, light soaking, or an undoped ZnO layer. Promising results were obtained with sputtering. A 13% efficiency cell was obtained for a Zn(O,S) emitter layer deposited with 0.5%O2. With further optimization of process parameters and an analysis of the loss mechanisms, it should be possible to increase the efficiency.
Keywords :
atomic layer deposition; copper compounds; gallium compounds; indium compounds; liquid phase deposition; oxygen; solar cells; sputter deposition; ternary semiconductors; zinc compounds; ALD; CBD; CIGS solar cells; CuInGaSe2; O2; ZnOS; atomic layer deposition; buffer layers; chemical bath deposition; light soaking; loss mechanisms; post annealing; process parameters; sputtering; Optical films; Photonic band gap; Photovoltaic cells; Sputtering; Zinc oxide; Buffer layers; copper indium gallium diselenide; thin film solar cells; wide bad gap emitters; zinc oxysulfide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317918
Filename :
6317918
Link To Document :
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