• DocumentCode
    3518652
  • Title

    Electrical Performances of Tellurium-Rich GexTe1-x Phase Change Memories

  • Author

    Navarro, G. ; Pashkov, N. ; Suri, M. ; Sousa, V. ; Perniola, L. ; Maitrejean, S. ; Persico, A. ; Roule, A. ; Toffoli, A. ; De Salvo, B. ; Zuliani, P. ; Annunziata, R.

  • Author_Institution
    CEA-LETI, MINATEC, Grenoble, France
  • fYear
    2011
  • fDate
    22-25 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper investigates the electrical performance of Tellurium-rich GexTe1-x (with x = 0.3, 0.4, 0.5) Phase Change Memory (PCM) devices. Analysis performed on lance-type PCM cells showed an increase in threshold voltage and crystallization temperature as the Te content is increased. Furthermore, the current required to program the memory in the high resistive state decreased. The improved stability of amorphous phase in Te-rich materials gives rise to higher data retention in our devices.
  • Keywords
    germanium compounds; phase change memories; GexTe1-x; amorphous phase; crystallization temperature; data retention; electrical performance; lance-type PCM cells; phase change memory devices; threshold voltage; Conductivity; Crystallization; Performance evaluation; Phase change materials; Resistance; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2011 3rd IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4577-0225-9
  • Electronic_ISBN
    978-1-4577-0224-2
  • Type

    conf

  • DOI
    10.1109/IMW.2011.5873232
  • Filename
    5873232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3518652