Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs

Author

Burenkov, A. ; Kampen, C. ; Lorenz, J. ; Ryssel, H.

Author_Institution

Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen

fYear

2008

fDate

12-14 March 2008

Firstpage

215

Lastpage

218

Abstract

Problems of pre-silicon compact modeling of nano-scaled silicon-on-insulator MOSFETs are addressed using the extraction of SPICE model parameters directly from numerical TCAD simulations. Although there are difficulties in the parameter extraction for the standard SPICE compact models we show by a direct comparison with the results of the numerical mixed-mode TCAD simulations that with some trade-offs in accuracy of static device characteristics reasonably accurate transient SPICE simulations are possible for such transistors.

Keywords

MOSFET; SPICE; circuit simulation; nanoelectronics; silicon-on-insulator; technology CAD (electronics); SPICE modeling; SPICE simulations; mixed-mode TCAD simulations; nano-scaled SOI MOSFETs; nano-scaled silicon-on-insulator MOSFETs; parameter extraction; pre-silicon compact modeling; static device characteristics; Computational modeling; Doping; MOSFETs; Nanoscale devices; Numerical simulation; Predictive models; SPICE; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on

Conference_Location

Udine

Print_ISBN

978-1-4244-1729-2

Electronic_ISBN

978-1-4244-1730-8

Type

conf

DOI

10.1109/ULIS.2008.4527177

Filename

4527177