DocumentCode :
3518660
Title :
Thinning of Si in SOI wafers by the SC1 standard clean
Author :
Celler, G.K. ; Barr, D.L. ; Rosamilia, J.M.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
1999
fDate :
4-7 Oct. 1999
Firstpage :
114
Lastpage :
115
Abstract :
SOI structures are becoming progressively thinner as device dimensions are scaled down. Although thinner layers of Si and SiO/sub 2/ can be made directly by (a) reducing the dose and energy of oxygen ions in the SIMOX process, and (b) using lower H/sup +/ implant energy in the SmartCut/sup TM/ wafer (Bruel, 1995), there are limits to how thin Si films can be made in that way. Therefore, direct thinning methods are often used to obtain the final thickness of Si on the buried oxide (BOX) layer. Sacrificial oxidation is frequently used, a process in which oxidation consumes Si and the oxide is removed by wet etching in a HF solution. Direct wet etching of Si is not used since the etch rates are not as well controlled as oxidation rates, and significant roughening of the surface may occur. In this paper, we discuss application of a conventional SC1 surface cleaning procedure for adjusting silicon film thickness. We also note that silicon removal during cleaning steps must be taken into account when processing thin SOI films.
Keywords :
buried layers; etching; integrated circuit technology; oxidation; silicon-on-insulator; surface cleaning; H; H/sup +/ implant energy; HF; HF solution; O/sub 2/; SC1 standard clean; SC1 surface cleaning procedure; SIMOX process; SOI structures; SOI wafers; Si; Si consumption; Si layers; Si thinning; Si-SiO/sub 2/; SiO/sub 2/ layers; SmartCut wafer; buried oxide; cleaning; device dimension downscaling; direct thinning methods; direct wet etching; etch rate; oxidation rate; oxide removal; oxygen ion dose; oxygen ion energy; sacrificial oxidation; silicon film thickness; silicon removal; surface roughening; thin SOI film processing; wet etching; Chemistry; Hafnium; Oxidation; Rough surfaces; Semiconductor films; Silicon; Surface cleaning; Surface contamination; Surface roughness; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
ISSN :
1078-621X
Print_ISBN :
0-7803-5456-7
Type :
conf
DOI :
10.1109/SOI.1999.819879
Filename :
819879
Link To Document :
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