The effects of preparation conditions of SIMOX samples on the photoluminescence spectra of their buried oxide layer

Author

Skorupa, W. ; Rebohle, L. ; Revesz, A.G. ; Hughes, H.L.

Author_Institution

Forschungszentrum Rossendorf, Dresden, Germany

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

127

Lastpage

128

Abstract

The purpose of this work was to study the effects of oxygen implant conditions and post-implant processes on the photoluminescence (PL) behavior of the BOX layer of SIMOX structures. The effect of heat treatment of pseudo-SIMOX structures (top Si layer removed) is also reported; this point is relevant to the defect structure of BOX layers. An important aspect of this work is that the samples used in this work have been extensively studied by various electrical and other techniques so that the PL spectra could be correlated with the results of those studies.

Keywords

SIMOX; buried layers; crystal defects; dielectric thin films; heat treatment; integrated circuit technology; ion implantation; photoluminescence; BOX layer; BOX layers; PL spectra; SIMOX samples; SIMOX structures; Si-SiO/sub 2/; buried oxide layer; defect structure; heat treatment; oxygen implant conditions; photoluminescence; photoluminescence spectra; post-implant processes; preparation conditions; pseudo-SIMOX structures; top Si layer; Amorphous silicon; Argon; Crystallization; Electrons; Heat treatment; Implants; Laboratories; Photoluminescence; Semiconductor films; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819885

Filename

819885