DocumentCode
3518765
Title
Design considerations for industrial rear passivated solar cells
Author
Lauermann, Thomas ; Fröhlich, Benjamin ; Hahn, Giso ; Terheiden, Barbara
Author_Institution
Dept. of Phys., Univ. of Konstanz, Konstanz, Germany
fYear
2012
fDate
3-8 June 2012
Abstract
In this work, the solar cell development issues arising by adding a dielectric rear side passivation to a standard screen-printing process are discussed with deposited Al2O3 on p-type Cz-Si as an example. The influence of several design parameters is assessed in simulation and experiment and an optimization strategy is presented. These parameters include optical properties of the cell, like the choice of dielectric layer thickness and wafer surface roughness, parameters that influence the passivation quality like the temperature of the co-firing step in a belt furnace as well as electrical parameters like contact geometry, contact spacing and base resistivity. Their influence on the three efficiency-determining quantities, VOC, JSC and FF is outlined. Special attention is paid to minimizing the inevitable loss in FF in a PERC design.
Keywords
aluminium compounds; dielectric thin films; optimisation; silicon; solar cells; PERC design; base resistivity; contact geometry; contact spacing; dielectric layer thickness; dielectric rear side passivation; efficiency-determining quantities; electrical parameters; industrial rear passivated solar cells; optimization strategy; passivation quality; solar cell development; standard screen-printing process; wafer surface roughness; Conductivity; Firing; Passivation; Photovoltaic cells; Resistance; Silicon; dielectric films; finite element methods; photovoltaic cells; semiconductor device manufacture; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6317925
Filename
6317925
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