Circuit simulator and compact model requisites for accurate simulation of AC floating body behaviour in PD SOI

Author

Benson, J. ; Redman-White, William ; Easson, C.A. ; D´Halleweyn, N.V. ; Uren, M.J.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

135

Lastpage

136

Abstract

Investigations of floating body behaviour of partially depleted (PD) SOI MOSFETs have established the presence of frequency-dependent drain conductance behaviour below the onset of the kink effect (Howes and Redman-White, 1992). This is due to capacitive coupling, and is not related to self-heating (Caviglia and Iliadis, 1992; Redman-White et al. 1992). As the conductances associated with the body node are extremely low in this region, we found that there are unexpected constraints on both the formulation of PD SOI compact models and their implementation in circuit simulation packages.

Keywords

MOSFET; capacitance; circuit simulation; electric admittance; semiconductor device models; silicon-on-insulator; AC floating body behaviour; PD SOI; PD SOI compact models; PD-SOI MOSFETs; Si-SiO/sub 2/; body node conductances; capacitive coupling; circuit simulation packages; circuit simulator; compact model; floating body behaviour; frequency-dependent drain conductance; kink effect; partially depleted SOI MOSFETs; self-heating; simulation; Admittance; Capacitance measurement; Circuit simulation; Convergence; Feedback; Frequency dependence; MOSFETs; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819889

Filename

819889