Growth and characterization of InGaAs quantum dots on metamorphic GaAsP templates by molecular beam epitaxy

Author

Grandal, J. ; Grassman, Tyler J. ; Carlin, Andrew M. ; Brenner, M.R. ; Galiana, B. ; Carlin, John A. ; Limei Yang ; Mills, M.J. ; Ringel, Steven A.

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2012

fDate

3-8 June 2012

Abstract

The work discussed here focuses on the integration of InGaAs Stranski-Krastanov type quantum dots within a GaAsP metamorphic photovoltaic material matrix via molecular beam epitaxy. Two basic parameters, growth rate and substrate temperature, were studied to determine the nucleation behavior on the GaAsP surface, followed by exploratory growths of encapsulated quantum dot multilayer structures on both tensile (GaAs_yP_1-y/GaAs) and compressive (GaAs_yP_1-y/Si) graded buffers. X-ray diffraction measurements show the presence of satellite peaks due to the superlattice-like periodic structures, indicating sharp, uniform interfaces. Photoluminescence spectra reveal quantum confinement of the InGaAs quantum dots, with 400 meV blue-shifted emission and 52 meV peak width at 20 K.

Keywords

III-V semiconductors; X-ray diffraction; elemental semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; multilayers; nucleation; periodic structures; photoluminescence; semiconductor growth; semiconductor quantum dots; semiconductor superlattices; silicon; solar cells; GaAsP-Si; InGaAs; Stranski-Krastanov type quantum dots; X-ray diffraction measurements; blue-shifted emission; compressive graded buffers; electron volt energy 400 meV; electron volt energy 52 meV; encapsulated quantum dot multilayer structures; growth rate; metamorphic photovoltaic material matrix; metamorphic templates; molecular beam epitaxy; photoluminescence spectra; quantum confinement; quantum dot characterization; substrate temperature; superlattice-like periodic structures; temperature 20 K; tensile graded buffers; Gallium arsenide; Photonic band gap; Satellite broadcasting; Satellites; Silicon; Substrates; Quantum dots; X-ray diffraction; metamorphic band gap engineering; molecular beam epitaxy; photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317939

Filename

6317939