Title :
Study on fabrication of sub-micron structures for MEMS using deep X-ray lithography
Author :
Ueno, Hiroshi ; Nishi, Nobuyoshi ; Sugiyama, Susumu
Author_Institution :
Fac. of Sci. & Eng., Ritsumeikan Univ., Shiga, Japan
Abstract :
It is necessary for practical MEMS with high performance to be fabricated microstructures with sub-micron widths and gaps (lines and spaces). In sub-micron deep X-ray lithography, one of the most crucial considerations is the fabrication of an X-ray mask with thick X-ray absorbers having sub-micron width. An X-ray mask, composed of 1 μm-thick Au with a 0.6 μm line width and a 0.2 μm space as absorbers, 2 μm-thick SiC with 240 MPa of tensile stress as a membrane and 625 μm-thick Si as a frame, was fabricated. A procedure for the fabrication process of the X-ray mask that obtains the smallest deformation of the X-ray absorbers, was adopted. On the other hand, in order to reduce the influence of Fresnel diffraction on lithography accuracy, a PMMA resist was polymerized without residual stress, which had been the main cause of a warp in the substrate, by controlling of the polymerization process. As a result, a submicron PMMA structure with 0.23 μm-minimum width and 15 μm height was fabricated by deep X-ray lithography
Keywords :
Fresnel diffraction; X-ray masks; elemental semiconductors; gold; micromechanical devices; polymer films; silicon; silicon compounds; 0.23 mum; 1 mum; 15 mum; 2 mum; 240 MPa; 625 mum; Au; Fresnel diffraction; MEMS; PMMA resist; Si; SiC; X-ray absorbers; X-ray mask; fabrication; lithography accuracy; microstructures; polymerization; residual stress; submicron PMMA structure; submicron deep X-ray lithography; tensile stress; warp; Biomembranes; Fabrication; Gold; Micromechanical devices; Microstructure; Polymers; Silicon carbide; Tensile stress; X-ray diffraction; X-ray lithography;
Conference_Titel :
Micromechatronics and Human Science, 1999. MHS '99. Proceedings of 1999 International Symposium on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-5790-6
DOI :
10.1109/MHS.1999.819987