DocumentCode
3519167
Title
Achievement of 17.5% efficiency with 30 × 30cm2-sized Cu(In,Ga)(Se,S)2 submodules
Author
Nakamura, Motoshi ; Chiba, Yoshiyuki ; Kijima, Shunsuke ; Horiguchi, Kyouhei ; Yanagisawa, Yoshihiko ; Sawai, Yuko ; Ishikawa, Keisuke ; Hakuma, Hideki
Author_Institution
Solar Bus. Center, Showa Shell Sekiyu K.K., Atsugi, Japan
fYear
2012
fDate
3-8 June 2012
Abstract
The efficiency of 17.8% on a 30 × 30cm2-sized Cu(In,Ga)(Se,S)2 (CIS)-based thin-film submodule was achieved. The device structure is same as our previous works; monolithically integrated CIS-based cells on a Mo-deposited glass substrate with a Zn(O, S, OH)x buffer and a ZnO window. Current Progress was mainly brought by review of the band profile of the absorber layer. More specifically, fine tuning of the grading of Ga/(Ga+In) and S/(Se+S) ratio turned out to improve the value of Voc × Jsc by a factor of as much as three percent.
Keywords
II-VI semiconductors; copper compounds; gallium compounds; indium compounds; solar cells; zinc compounds; CIS-based thin-film submodule; Cu(InGa)(SeS)2; ZnO; absorber layer; band profile; device structure; fine tuning; glass substrate; monolithically integrated CIS-based cells; Apertures; Coatings; Current measurement; Integrated optics; Measurement uncertainty; Optical buffering; Photonic band gap; 17.8%; CIS; Cu(In,Ga)(Se,S)2 ; EQE; Solar Frontier; Zn(O, S, OH)x buffer layer; band gap; spectrum; submodule;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6317944
Filename
6317944
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