DocumentCode
3519176
Title
Development of negative profile of dry film resist for metal lift off process
Author
Chew, Michelle ; Ho, Soon Wee ; Su, Nandar ; Liao, Ebin ; Rao, Vempati Srinivas ; Premachandran, C.S. ; Kumar, Rakesh ; Damaruganath, Pinjala
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
884
Lastpage
888
Abstract
A dry film photoresist was selected as the sacrificial material for a metal lift off process. However, a weak and inconsistent adhesion of the evaporated under bump metallurgy (UBM) and solder on the passivation surface was observed during the dry film stripping process. This problem may be due to the poor negative profile (88 to 89 degrees) of the patterned dry film side wall after dry film developing, resulting to inconsistent metal lift off. A few dry film predevelopment and post development parameters are identified and tested from the standard dry film development process, to obtain a negative profile of the dry film to be less than 84 degrees. After each test, cross section of the patterned dry film side wall is observed under a microscope to check if a negative profile is obtained. The 50 ¿m thick dry film at 35 mJ/cm2 with other modifications of the process gives the best results.
Keywords
adhesion; metallic thin films; passivation; photoresists; solders; Development under bump metallurgy; adhesion; dry film photoresist; dry film stripping; metal lift off process; negative profile; passivation surface; sacrificial material; solder; Adhesives; Costs; Inorganic materials; Materials science and technology; Microelectronics; Passivation; Resists; Standards development; Substrates; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
Conference_Location
Singapore
Print_ISBN
978-1-4244-5099-2
Electronic_ISBN
978-1-4244-5100-5
Type
conf
DOI
10.1109/EPTC.2009.5416418
Filename
5416418
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