• DocumentCode
    3519328
  • Title

    Spatially resolved photoluminescence imaging of essential silicon solar cell parameters

  • Author

    Shen, Chao ; Kampwerth, Henner ; Green, Martin

  • Author_Institution
    Univ. of New South Wales, Sydney, NSW, Australia
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    We present a method to image the following spatially resolved parameters of a solar cell: voltage Vxy, current density Jxy, power density Pxy, efficiency ηxy, series resistance Rs,xy, fill factor FFxy and dark saturation current densities of a two diode model J01,xy and J02,xy. The algorithm determines this set of self-consistent parameters by using a minimum of five electrical biased photoluminescence images.
  • Keywords
    current density; elemental semiconductors; photoluminescence; silicon; solar cells; Si; current density; dark saturation current densities; diode model; electrical biased photoluminescence images; fill factor; power density; series resistance; silicon solar cell parameters; spatially resolved parameters; spatially resolved photoluminescence imaging; Current density; Imaging; Lighting; Photovoltaic cells; Resistance; Silicon; Sun; dark saturation current; imaging; photoluminescence; solar cell; spatially resolved;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317955
  • Filename
    6317955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3519328