Study on carrier mobility in graphene nanoribbons

Author

Yu, Xinxin ; Zhang, Jinyu ; Kang, Jiahao ; Qian, He ; Yu, Zhiping ; Tan, Yaohua

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

219

Lastpage

222

Abstract

In this paper, the carrier mobility in graphene nanoribbons(GNRs) is studied. The total carrier mobility calculation includes four scattering mechanisms: surface polar phonons (SPP) scattering, intrinsic acoustic phonon scattering, line-edge roughness scattering, and Coulomb scattering. Carrier SPP scattering rates for five high-κ dielectric materials, including SiO₂, Al₂O₃, HfO₂, ZrO₂ and AlN, are calculated based on Mahan´s theory. SPP scattering turns out to be important for GNRs with small width. Compared to other dielectric materials, AlN is more capable of suppressing both SPP scattering and Coulomb scattering.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; dielectric materials; graphene; hafnium compounds; high-k dielectric thin films; nanostructured materials; silicon compounds; surface phonons; surface scattering; wide band gap semiconductors; zirconium compounds; Al₂O₃; AlN; C; Coulomb scattering; HfO₂; Mahan theory; SiO₂; ZrO₂; acoustic phonon scattering; carrier mobility; graphene nanoribbons; high-κ dielectric materials; line-edge roughness scattering; surface polar phonon scattering; Aluminum oxide; Dielectric materials; Dielectrics; Logic gates; Phonons; Scattering; graphene nanoribbon; mobility; surface polar phonon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on

Conference_Location

Osaka

ISSN

1946-1569

Print_ISBN

978-1-61284-419-0

Type

conf

DOI

10.1109/SISPAD.2011.6034959

Filename

6034959