• DocumentCode
    3519491
  • Title

    Study on shear strength and Jc of EMC/Cu interface with Cu oxidation and moisture absorption

  • Author

    Fang, Xing ; Fang, Qiang ; Wang, Jun ; Yu, Hongkun ; Shao, Xuefeng

  • Author_Institution
    Dept. of Mater. Sci., Fudan Univ., Shanghai, China
  • fYear
    2009
  • fDate
    10-13 Aug. 2009
  • Firstpage
    1260
  • Lastpage
    1263
  • Abstract
    In plastic power devices, the interfaces of Cu/EMC are most likely to delaminate under thermal loading, especially when moisture diffuses into the interface through EMC. In this work, the bare die samples were fabricated in standard commercial process. Shear test of Cu/EMC interface was designed to measure the strength of the interface with different lead-frame oxidation and moisture absorption time. The samples with pre-cracks on Cu/EMC interfaces were studied by the same shear test method and the critical value of J-integral was investigated by FEA (Finite Element Analysis). The results indicated that the shear strength of Cu/EMC interfaces and the value of J-integral declined dramatically with moisture absorption time. However, the effect of lead-frame oxidation is complex. The 2-D analysis of power device showed that the small initial crack, as small as 0.13 mm, will propagate along Cu/EMC interface when temperature is decreased to -55degC.
  • Keywords
    copper; corrosion; delamination; finite element analysis; moisture; oxidation; plastic packaging; reliability; shearing; thermal analysis; Cu; J integral; bare die; copper oxidation; epoxy moulding compound-copper interface; finite element analysis; lead frame oxidation; moisture absorption; plastic power device; shear strength; shear test; thermal loading; Absorption; Electromagnetic compatibility; Finite element methods; Moisture measurement; Oxidation; Plastics; Temperature; Testing; Thermal loading; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-4658-2
  • Electronic_ISBN
    978-1-4244-4659-9
  • Type

    conf

  • DOI
    10.1109/ICEPT.2009.5270602
  • Filename
    5270602