Title :
Nanostructuration of Graphene Nanoribbons for thermoelectric applications
Author :
Mazzamuto, F. ; Saint-Martin, J. ; Nguyen, V.Hung ; Apertet, Y. ; Chassat, C. ; Dollfus, P.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
Atomistic simulations of electron and phonon transport are performed within the non-equilibrium Green´s function formalism to analyze the thermal and electrical properties of graphene nanoribbons (GNRs). We predict that by patterning GNRs properly, a strong enhancement of thermoelectric properties can be achieved. From the study of edge orientation effects, we propose a strategy likely to degrade the thermal conductance while retaining high electronic conductance and thermopower. An effect of resonant tunneling of electrons is evidenced in mixed GNRs consisting in alternate zigzag and armchair sections or in perfect GNRs with vacancies. Combining these effects, an optimized structure able to provide a high thermoelectric factor of merit ZT exceeding unity at room temperature is demonstrated.
Keywords :
Green´s function methods; electrical conductivity; energy gap; graphene; nanostructured materials; phonons; resonant tunnelling; thermal conductivity; thermoelectric power; vacancies (crystal); C; atomistic simulations; band gap; edge orientation effects; electrical properties; electron transport; electronic conductance; graphene nanoribbons; nanostructuration; nonequilibrium Green´s function; phonon transport; resonant tunneling; temperature 293 K to 298 K; thermal conductance; thermoelectric factor; thermoelectric properties; thermopower; vacancies; Electric potential; Phonons; Photonic band gap; Resonant tunneling devices; Temperature; Thermal conductivity; Thermal degradation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6034960