Simulation of plasma immersion ion implantation

Author

Burenkov, A. ; Pichler, P. ; Lorenz, J. ; Spiegel, Y. ; Duchaine, J. ; Torregrosa, F.

Author_Institution

IISB, Fraunhofer Inst. for Integrated Syst. & Device Technol., Erlangen, Germany

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

231

Lastpage

234

Abstract

Ion implantation profiles of boron after a BF₃ plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 10¹⁵ to 10¹⁷ cm^-2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision approach for ion implantation. A good reproduction of the measured boron profiles was obtained using a double-exponential energetic spectrum of the boron ions.

Keywords

Monte Carlo methods; boron compounds; plasma collision processes; plasma immersion ion implantation; plasma simulation; secondary ion mass spectra; BF₃; Monte-Carlo based binary-collision approach; SIMS; double-exponential energetic spectrum; numerical simulation; plasma immersion ion implantation; pulsed voltage ion extraction; Boron; Doping; Energy measurement; Ion beams; Ion implantation; Plasmas; Silicon; Ion implantation; Plasma immersion; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on

Conference_Location

Osaka

ISSN

1946-1569

Print_ISBN

978-1-61284-419-0

Type

conf

DOI

10.1109/SISPAD.2011.6034962

Filename

6034962