• DocumentCode
    3519584
  • Title

    Polymer filling of medium density through silicon via for 3D-packaging

  • Author

    Chausse, P. ; Bouchoucha, M. ; Henry, D. ; Sillon, N. ; Chapelon, L.L.

  • Author_Institution
    MINATEC, CEA Leti, Grenoble, France
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    790
  • Lastpage
    794
  • Abstract
    In this paper, we present some process developments and polymer material evaluations done to achieve the complete filling of 3D-WLP via. The test wafers used for these studies were either blankets with several via sizes specifically designed to determine via filling process window, or wafers with patterns and stacking which result from a real set-top box demonstrator. Initially, the 3D-WLP integration scheme of the demonstrator which required complete via filling is presented. Then the different test structures and patterns needed to characterize via filling behavior are described. Two methods for via filling are exposed and discussed: spin-on process of liquid polymers and vacuum assisted lamination of dry film resists. Some results concerning filling morphology with dedicated polymers are presented for both methods. After that, the defined set of chemical, mechanical and electrical properties chosen to select the polymers is given and explained. Finally, some materials which fulfill previously defined requirements are evaluated and characterized.
  • Keywords
    filling; wafer level packaging; 3D-WLP integration scheme; 3D-packaging; dry film resists; filling process window; liquid polymers; medium density; polymer filling; polymer material evaluations; set-top box demonstrator; spin-on process; vacuum assisted lamination; Chemicals; Filling; Lamination; Mechanical factors; Morphology; Polymer films; Resists; Silicon; Stacking; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-5099-2
  • Electronic_ISBN
    978-1-4244-5100-5
  • Type

    conf

  • DOI
    10.1109/EPTC.2009.5416443
  • Filename
    5416443