DocumentCode :
3519628
Title :
Modeling of enhanced 1/ƒ noise in TFT with trap charges
Author :
Nakahagi, T. ; Sugiyama, D. ; Yukuta, S. ; Miyake, M. ; Miura-Mattausch, M. ; Miyano, S.
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
fYear :
2011
fDate :
8-10 Sept. 2011
Firstpage :
171
Lastpage :
174
Abstract :
We have investigates influence of existing trap states of TFT on device characteristics with use of the compact model HiSIM-TFT. Special focus is given on the 1/f noise characteristics, where it is found the Vgs dependence of the 1/f noise characteristics is very sensitive to the trap density distributions. We have successfully extracted high density of the shallow trap states with the measured 1/f noise characteristics.
Keywords :
1/f noise; thin film transistors; 1/f noise enhancement; TFT trap state; compact model HiSIM-TFT; shallow trap state; trap charge; trap density distribution; Density measurement; MOSFET circuits; Mathematical model; Noise; Noise measurement; Photonic band gap; Thin film transistors; 1/ƒ noise characteristics; I–V characteristics; TFT; compact model; trap density;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
ISSN :
1946-1569
Print_ISBN :
978-1-61284-419-0
Type :
conf
DOI :
10.1109/SISPAD.2011.6034969
Filename :
6034969
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3519628
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