• DocumentCode
    3519628
  • Title

    Modeling of enhanced 1/ƒ noise in TFT with trap charges

  • Author

    Nakahagi, T. ; Sugiyama, D. ; Yukuta, S. ; Miyake, M. ; Miura-Mattausch, M. ; Miyano, S.

  • Author_Institution
    Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
  • fYear
    2011
  • fDate
    8-10 Sept. 2011
  • Firstpage
    171
  • Lastpage
    174
  • Abstract
    We have investigates influence of existing trap states of TFT on device characteristics with use of the compact model HiSIM-TFT. Special focus is given on the 1/f noise characteristics, where it is found the Vgs dependence of the 1/f noise characteristics is very sensitive to the trap density distributions. We have successfully extracted high density of the shallow trap states with the measured 1/f noise characteristics.
  • Keywords
    1/f noise; thin film transistors; 1/f noise enhancement; TFT trap state; compact model HiSIM-TFT; shallow trap state; trap charge; trap density distribution; Density measurement; MOSFET circuits; Mathematical model; Noise; Noise measurement; Photonic band gap; Thin film transistors; 1/ƒ noise characteristics; I–V characteristics; TFT; compact model; trap density;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
  • Conference_Location
    Osaka
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-61284-419-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.2011.6034969
  • Filename
    6034969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3519628