DocumentCode :
3519692
Title :
Effect of transfer pressure on die attach film void performance
Author :
Su, Yeqing ; Bai, Denis ; Huang, Vitto ; Chen, Weimin ; Xian, Tee Swee
Author_Institution :
Freescale Semicond. (China) Ltd., Tianjin, China
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
754
Lastpage :
757
Abstract :
With the development of high density packages, the space from die edge to bond finger is shrunk and challenge comes into being for liquid-type adhesive correspondingly due to its bleed-out. Die attach film (DAF) as alternative has being widely used with its good control of bleed, consistent bond line thickness (BLT) and simplified operation. However void at the interface between die and substrate is one of major concerns. There are many factors contributed to void performance including DAF material property, substrate surface condition, die attach parameters and so on. In this paper, the effect of transfer pressure on void performance in a ball grid array plastic package is focused on. Simultaneously the characteristic of DAF void and its formation/reduction mechanism also are investigated. It was found that the DAF voids occur at substrate/film interface with fixed location and similar pattern. They can be reduced significantly by enhancement of transfer pressure during molding process, which can be explained that gap on substrate surface is filled furthest by film under high transfer pressure.
Keywords :
adhesive bonding; ball grid arrays; microassembling; moulding; ball grid array plastic package; bond line thickness; die attach film void performance; formation-reduction mechanism; high density packages; molding process; substrate-film interface; transfer pressure; Assembly; Bonding; Delamination; Electronics packaging; Inspection; Microassembly; Plastic films; Plastic packaging; Semiconductor films; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5099-2
Electronic_ISBN :
978-1-4244-5100-5
Type :
conf
DOI :
10.1109/EPTC.2009.5416448
Filename :
5416448
Link To Document :
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