High-uniform and high-temperature-operation 12-element 1.5-/spl mu/m AlGaInAs/InP laser arrays

Author

Chia-Chien Lin ; Tien-Tsorng Shih ; Hung-Pin Shiao ; Wei-Han Wang ; Hung-Huei Liao ; Wei Lin

Author_Institution

Integrated Optoelectron., Chunghwa Telecom Co. Ltd., Taiwan, China

fYear

1998

fDate

3-8 May 1998

Firstpage

135

Lastpage

136

Abstract

Summary form only given. We adopted the strain compensated AlGaInAs quantum wells to fabricate laser arrays, which show high-uniform and high-temperature operational characteristics. We reported the highly uniform, low threshold current and high temperature operation of 1.5-/spl mu/m AlGaInAs-InP laser arrays.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor laser arrays; 1.5 mum; 12-element; AlGaInAs; AlGaInAs QW lasers; AlGaInAs-InP laser arrays; AlGaInAs/InP laser arrays; InP; high temperature operation; high-temperature operational characteristics; high-temperature-operation; high-uniform; highly uniform; low threshold current; strain compensated AlGaInAs quantum wells; Fiber lasers; Laboratories; Optical arrays; Optical fibers; Power lasers; Quantum well lasers; Telecommunication buffers; Temperature dependence; Tensile strain; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675964

Filename

675964