Title :
Development of zinc phosphide as a p-type absorber
Author :
Vasekar, Parag ; Adusumilli, Siva P. ; VanHart, Daniel ; Dhakal, Tara ; Desu, Seshu
Author_Institution :
Center for Autonomous Solar Power, State Univ. of New York at Binghamton, Binghamton, NY, USA
Abstract :
In the present contribution, we report a simple and repeatable process for the synthesis of zinc phosphide on two different substrates, zinc foil and zinc evaporated on molybdenum-coated glass. Zinc phosphide has been an important candidate for optoelectronic applications and has also been explored in the lithium ion batteries. Zinc phosphide is synthesized from earth-abundant constituents, zinc and phosphorous. Trioctylphosphine (TOP) is used as a source of phosphorous which reacts with zinc and results in the growth of zinc phosphide. Zinc phosphide has been successfully synthesized in both continuous thin film and nanowires form around ~ 350°C. The synthesized zinc phosphide phase was characterized using SEM, EDS, XRD and XPS. Possible growth mechanism is discussed.
Keywords :
nanowires; secondary cells; semiconductor thin films; vacuum deposition; zinc compounds; EDS; SEM; XPS; XRD; Zn3P2; continuous thin film; earth-abundant constituents; growth mechanism; lithium ion batteries; molybdenum-coated glass; nanowires; optoelectronic applications; p-type absorber; trioctylphosphine; zinc foil; zinc phosphide; Films; Glass; Nanowires; Photovoltaic cells; X-ray scattering; Zinc; earth-abundant; photovoltaic; trioctylphosphine; zinc phosphide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317980