Influence of Cu(In,Ga)Se2 grain orientation on solution growth of Zn(O,S) and CdS

Author

Witte, Wolfram ; Abou-Ras, Daniel ; Hariskos, Dimitrios

Author_Institution

Zentrum fur Sonnenenergie- und Wasserstoff-Forschung Baden-Wurttemberg (ZSW), Stuttgart, Germany

fYear

2012

fDate

3-8 June 2012

Abstract

Thin films grown by chemical bath deposition (CBD) are the most commonly used buffers layers for Cu(In,Ga)Se₂ (CIGS) thin-film solar cells. CIGS record devices employ CBD CdS or CBD Zn(O,S) buffers for small-area cells and even large-area modules. The present contribution discusses CBD buffer growth on polycrystalline CIGS films deposited by co-evaporation. We report a correlation between coverage of CBD films and CIGS grain orientation as determined with electron backscatter diffraction. The {11 2} planes of CIGS grains are sparsely covered with the CBD films whereas on <;100>;/<;001>; oriented CIGS grains we found a very dense coverage of the CIGS surface.

Keywords

buffer layers; copper compounds; electron backscattering; gallium compounds; indium compounds; semiconductor thin films; solar cells; vacuum deposition; CBD buffer growth; CIGS surface; CIGS thin-film solar cells; CdS; Cu(InGa)Se₂; Zn(OS); buffers layers; chemical bath deposition; co-evaporation; electron backscatter diffraction; grain orientation; polycrystalline CIGS films; solution growth; Buffer layers; Chemicals; Crystals; Kinetic theory; Photovoltaic cells; Scanning electron microscopy; CBD; CIGS; CdS; EBSD; Zn(O,S); buffer; grain orientation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317988

Filename

6317988