Title :
Parameter design of solder die bonding based on DOE
Author :
Hu, Jun ; Xie, Xinpeng
Author_Institution :
Guangdong Yuejing High-Tech Co, Ltd., Guangzhou, China
Abstract :
In this paper, DOE methodology was used to set parameters that may exert an influence on voids in the solder layer of MOSFET´s products. Parameters of temperature and delay-times were set. With different parameters, voids rate in solder layer changes. Finally we can find the main factor affecting voids rate, thus to reduce the voids rate in solder layer and get high-powered semiconductor device.
Keywords :
design of experiments; microassembling; power MOSFET; solders; DOE methodology; MOSFET products; bonding parameter design; design of experiments; high-powered semiconductor device; solder die bonding; solder layer; Delay effects; Impedance; Inorganic materials; Joining materials; Microassembly; Semiconductor devices; Semiconductor materials; Soldering; Thermal stresses; US Department of Energy;
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4658-2
Electronic_ISBN :
978-1-4244-4659-9
DOI :
10.1109/ICEPT.2009.5270640
