• DocumentCode
    3520286
  • Title

    Novel bumping material for stacking silicon chips

  • Author

    Choi, Kwang-Seong ; Sung, Ki-Jun ; Lim, Byeong-Ok ; Bae, Hyun-Cheol ; Jung, Sunghae ; Jong Tae Moon ; Yong Sung Eom

  • Author_Institution
    Convergence & Components & Mater. Res. Lab., ETRI, Daejeon, South Korea
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    579
  • Lastpage
    583
  • Abstract
    Bumping processes like the controlled collapse chip connect new process (C4NP) and the immersion solder bumping process for a fine pitch bumping have the disadvantages of the complicated series of process and the possibility of the reliability problems, respectively. To overcome the weak points of these processes, we developed a novel bumping material based on the rheological behavior of the molten droplets of solder in a resin. The novel resin was designed to have the properties of low viscosity for the rheological behavior of the droplets during the bumping process, the elimination of the oxide layer on the solder powder for the wetting on the pad near the melting point of the solder, and no major weight loss caused by the out-gassing. With this novel material, the bumps array of Sn-58Bi solder were formed, and the applicability of the resin to the Sn-3.0Ag-0.5Cu (SAC305) was, also, identified.
  • Keywords
    bismuth alloys; copper alloys; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; rheology; silver alloys; soldering; stacking; tin alloys; SAC305; Sn-Ag-Cu; Sn-Bi; bumping material; bumping processes; molten droplets; reliability problem; rheological behavior; silicon chip stacking; solder powder; wetting; Convergence; Moon; Packaging; Powders; Resins; Rheology; Silicon; Stacking; Temperature; Viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-5099-2
  • Electronic_ISBN
    978-1-4244-5100-5
  • Type

    conf

  • DOI
    10.1109/EPTC.2009.5416483
  • Filename
    5416483