DocumentCode :
3520312
Title :
Web use and the RIT silicon processes course: triple implanted BJT process laboratory
Author :
Pearson, Robert
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
fYear :
1997
fDate :
20-23 Jul 1997
Firstpage :
22
Lastpage :
25
Abstract :
A senior or graduate level advanced course covering diffusion, oxidation and ion implantation is intimately coupled to a laboratory fabrication project which uses a triple implanted BJT process. Example process simulations which reinforce lecture material are provided by way of the class Web site. Students simulate the entire process flow, including experimental design splits and collect process data on the Web for comparison and analysis. Pages on ion implantation are used to prepare students for use of the actual equipment. Animated Web applets are used to review some of the basic device physics before electrical testing begins. The electrical test programs, sample test data and setup information are also available through the Web. This paper describes RIT´s implementation of these features in course work in microelectronics
Keywords :
Internet; bipolar integrated circuits; computer aided instruction; diffusion; digital simulation; educational courses; electronic engineering computing; electronic engineering education; elemental semiconductors; integrated circuit design; integrated circuit manufacture; integrated circuit testing; ion implantation; oxidation; semiconductor process modelling; silicon; student experiments; Si; Si processes course; Web use; animated Web applets; class Web site; diffusion; electrical test programs; example process simulations; graduate level advanced course; ion implantation; laboratory fabrication project; microelectronics course; oxidation; process data collection; process flow simulation; sample test data; senior level advanced course; setup information; triple implanted BJT process laboratory; Analytical models; Animation; Design for experiments; Fabrication; Ion implantation; Laboratories; Oxidation; Physics; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
ISSN :
0749-6877
Print_ISBN :
0-7803-3790-5
Type :
conf
DOI :
10.1109/UGIM.1997.616673
Filename :
616673
Link To Document :
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