Title :
A senior undergraduate course on the structural design and characterization of submicron CMOS
Author :
Turkman, Renan ; Fuller, Lynn
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
A required senior undergraduate course on CMOS process integration was recently added to the microelectronic engineering curriculum at RIT The objective of the course is to educate the students in the field of device/integration engineering in the semiconductor industry. The topics Include front-end of the line process integration and the physics of submicron CMOS devices. At the end of the course, the students are asked to do the structural design and the electrical evaluation of 0.25 μm, 2.5 V NMOS transistors
Keywords :
CMOS integrated circuits; educational courses; electronic engineering education; integrated circuit design; integrated circuit manufacture; integrated circuit technology; 0.25 micron; 2.5 V; CMOS process integration; characterization; microelectronic engineering curriculum; senior undergraduate course; structural design; submicron CMOS; CMOS process; CMOS technology; Computer science education; Design engineering; Electrical engineering computing; Electronics industry; Isolation technology; Microelectronics; Physics education; Semiconductor device manufacture;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616675
