Low K CMOS90 2N gold wire bonding process development

The electronics industry is mainly driven by the demand for smaller, faster, higher complexity, more reliable and cheaper device. Reduction in bond pad patch and low K wafer were introduced into mass production for miniaturation and signal transmission integrity. High safety requirement and longer working life demand high reliability performance especially in automotive and aerospace filed. Although trends in electronic packing have been focused on the development of flip chip, Wire bonding still cements its position in chip interconnection technology. In IC assembly, gold wire is the key material in wire bonding process to connect chip to substrate. 2N gold wire with specific dopant is applied in many types of package for stringent reliability requirement field. This study will focus on 2N gold wire application in wire bonding process.