• DocumentCode
    3520460
  • Title

    SRC Summer 1996 Continuous Quality Improvement

  • Author

    Kuehn, Richard ; Rying, Eric ; Maher, Dennis ; Ottaviani, Diana ; Lu, Jye-Chyi ; Harding, Brian

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • fYear
    1997
  • fDate
    20-23 Jul 1997
  • Firstpage
    61
  • Lastpage
    65
  • Abstract
    In May of 1996, the Engineering Research Center for Advanced Electronic Materials Processing (ERC for AEMP) at North Carolina State University (NCSU) received funding from the Semiconductor Research Corporation (SRC) to pursue what is called the SRC Summer ´96 Continuous Quality Improvement Initiative. As a result of this situation, three graduate students were selected to participate in the project and a number of researchers from the ERC-AEMP were brought on board to support the effort. The objective of the project was to continuously improve the quality of an in situ gate-stack process for the across-stage fabrication of MOS capacitors. The research pathways to achieve this objective were process characterization as well as definition, materials analysis and statistical analysis. This paper will discuss the key issues in this effort
  • Keywords
    MOS capacitors; integrated circuit yield; quality control; research initiatives; statistical analysis; Advanced Electronic Materials Processing; Engineering Research Center; MOS capacitors; North Carolina State University; Semiconductor Research Corporation; across-stage fabrication; continuous quality improvement; in situ gate-stack process; materials analysis; process characterization; researchers; statistical analysis; Amorphous silicon; Electrodes; Furnaces; Oxidation; Poles and towers; Raman scattering; Semiconductor films; Spectroscopy; Temperature; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
  • Conference_Location
    Rochester, NY
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-3790-5
  • Type

    conf

  • DOI
    10.1109/UGIM.1997.616683
  • Filename
    616683