DocumentCode
3520557
Title
A breakdown model and lifetime projection for thin gate oxide MOS devices
Author
Liu, Chuan H. ; Grondin, Robert O. ; DeMassa, Thomas A. ; Sanchez, Julian J.
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear
1997
fDate
20-23 Jul 1997
Firstpage
78
Lastpage
82
Abstract
An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which automatically accounts for all trapping, the oxide lifetimes under normal conditions could be estimated by extrapolating the high field accelerated data
Keywords
MOS integrated circuits; carrier lifetime; electric breakdown; electron traps; extrapolation; integrated circuit modelling; MOS integrated circuits; TDDB; VLSI; analytical breakdown model; extrapolation; high field accelerated data; lifetime projection; oxide lifetimes; thin gate oxide MOS devices; trapping; Analytical models; Cathodes; EPROM; Electric breakdown; Electron traps; Equations; Life estimation; Lifetime estimation; Shape; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location
Rochester, NY
ISSN
0749-6877
Print_ISBN
0-7803-3790-5
Type
conf
DOI
10.1109/UGIM.1997.616688
Filename
616688
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