Title :
Statistical modeling of hot-electron and ESD induced degradation in non-isothermal device
Author :
Lee, Sungkwon ; Sanders, Thomas J.
Author_Institution :
Florida Inst. of Technol., Melbourne, FL, USA
Abstract :
This paper addresses the integrated circuit industry needs for non-isothermal simulation in device reliability analysis, initial input factor sensitivity analysis and their software implementation. The key reliability issues are the hot-electron induced oxide damages which result in the device degradation and electro-static discharge (ESD) damages which may cause failure in circuit operation. The main purpose of this work is to provide a design aid tool to improve device reliability and performance
Keywords :
MOS integrated circuits; ULSI; circuit analysis computing; electrostatic discharge; failure analysis; hot carriers; integrated circuit modelling; integrated circuit reliability; sensitivity analysis; ESD induced degradation; MOS ULSI; design aid tool; device reliability analysis; failure; hot-electron induced degradation; initial input factor sensitivity analysis; integrated circuit simulation; nonisothermal device; oxide damages; software implementation; statistical modeling; Analytical models; Computational modeling; Degradation; Electrostatic discharge; Hot carriers; Integrated circuit reliability; Isothermal processes; MOSFETs; Predictive models; Ultra large scale integration;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616689
