Ion shower doping for emitter fabrication in crystalline Si solar cells

We propose ion shower doping technique to fabricate selective emitter structure solar cells. This technique provides large beam area and therefore high through-put. We used the technique to form emitter layer and also selective emitter parts for solar cell devices. From the results, it was confirmed the good electrical properties with uniform conversion efficiency in the wafers. There were no doping damage or contamination observed. In addition, the conversion efficiency of selective emitter cell showed higher than that of conventional cell. We believe that ion shower doping technique is useful to form emitter layer as well as selective emitter parts.