Nanosized metal grains induced electrical characteristic fluctuation in 16 nm bulk and SOI FinFET devices with TiN/HfO2 gate stack

In this study, the work function fluctuation (WKF) induced device variability in 16-nm-gate bulk and SOI FinFETs is for the first time explored by using an experimentally calibrated three-dimensional (3D) device simulation. Random nanosized grains of TiN gate are statistically positioned in the gate region of device to examine the associated electrostatic and carriers´ transport properties, concurrently capturing random grain´s size, number and position fluctuations. Both bulk and SOI FinFETs with TiN/HfO₂ gate stack are simulated, based upon experimentally available data. The approach of localized WKF simulation method is thus intensively performed to explore the device´s variability including comparison between bulk and SOI FinFETs. The results of this study enable us to get an even reasonably accurate account of the random grain´s number, position and size effects.