• DocumentCode
    3520616
  • Title

    Calibrating 2D potential models for fully depleted SOI MOSFET´s

  • Author

    Cao, J. Gene

  • Author_Institution
    Center for Math. in Ind., Michigan Technol. Univ., Houghton, MI, USA
  • fYear
    1997
  • fDate
    20-23 Jul 1997
  • Firstpage
    94
  • Lastpage
    97
  • Abstract
    We examine three basic approximations from which the existing quasi-2D models for fully depleted SOI MOSFET´s are derived. Based on our analysis, we propose corresponding strategies to calibrate these models
  • Keywords
    MOS integrated circuits; MOSFET; ULSI; semiconductor device models; semiconductor thin films; silicon-on-insulator; 2D potential models; ULSI; calibration; fully depleted SOI MOSFET; quasi-2D models; Boundary conditions; Charge carrier processes; Circuit simulation; Electric potential; MOSFET circuits; Poisson equations; Semiconductor films; Silicon; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
  • Conference_Location
    Rochester, NY
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-3790-5
  • Type

    conf

  • DOI
    10.1109/UGIM.1997.616692
  • Filename
    616692
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3520616