DocumentCode
3520658
Title
TCAD challenges and some Fraunhofer solutions
Author
Lorenz, Jürgen
Author_Institution
Fraunhofer Inst. for Integrated Syst. & Device Technol. IISB, Erlangen, Germany
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
1
Lastpage
4
Abstract
In order to meet its industrial target to reduce the development time and costs for new semiconductor technologies, devices and circuits, TCAD must meet various challenges which are outlined in the ITRS. After a short outline of these challenges, related results obtained at Fraunhofer for the simulation of lithography and other topography steps, dopant diffusion/activation, device architectures and impact of process variations are summarized.
Keywords
lithography; technology CAD (electronics); Fraunhofer solutions; TCAD; lithography; semiconductor device architectures; semiconductor technology; Etching; Integrated circuit modeling; Lithography; Materials; Semiconductor device modeling; Semiconductor process modeling; Transistors; ITRS; device architectures; dopant diffusion and activation; lithography; process variations and windows; topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035028
Filename
6035028
Link To Document