Statistical design for manufacturing software for low power radiation hardened SOI MOSFETs

Author

Phelps, Mark J. ; Hess, Glenn T. ; Sanders, Thomas J.

Author_Institution

Motorola Inc., Phoenix, AZ, USA

fYear

1997

fDate

20-23 Jul 1997

Firstpage

98

Lastpage

101

Abstract

This paper presents a new software tool called STADIUM-SOI which is employed by device engineers to statistically simulate silicon-on-insulator technologies. Using this software, it has been demonstrated that statistical simulation is an efficient way to investigate the effect of manufacturing variation on device yield for SOI processing

Keywords

MOSFET; design for manufacture; digital simulation; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; software tools; statistical analysis; SOI processing; STADIUM-SOI; Si; design for manufacturing software; device yield; manufacturing variation; radiation hardened SOI MOSFETs; software tool; statistical design for manufacturing; statistical simulation; Computational modeling; Computer simulation; Design engineering; Integrated circuit yield; MOSFETs; Manufacturing processes; Radiation hardening; Silicon on insulator technology; Software design; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial

Conference_Location

Rochester, NY

ISSN

0749-6877

Print_ISBN

0-7803-3790-5

Type

conf

DOI

10.1109/UGIM.1997.616694

Filename

616694