Real time statistical process control for plasma etching

Author

Guo, Hai-Fang ; Spanos, Costas J. ; Miller, Alan J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1991

fDate

20-22 May 1991

Firstpage

113

Lastpage

118

Abstract

The development and the application of a real-time statistical process control (SPC) scheme are presented. Based on time-series and multivariate statistics, this scheme can accommodate real-time sensor readings such as can be collected from a single-wafer plasma etcher via the SECSII communications protocol. The scheme has been successfully applied on a Lam Rainbow plasma etcher, and it has been able to detect internal machine shifts that cannot be seen with classical SPC procedures

Keywords

integrated circuit manufacture; process computer control; real-time systems; sputter etching; statistical process control; Lam Rainbow plasma etcher; SECSII communications protocol; SPC; internal machine shifts; multivariate statistics; plasma etching; real-time sensor readings; real-time statistical process control; single-wafer plasma etcher; time series filters; Condition monitoring; Control charts; Degradation; Etching; Manufacturing processes; Plasma applications; Process control; Protocols; Semiconductor device manufacture; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Science Symposium, 1991. ISMSS 1991., IEEE/SEMI International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-0027-0

Type

conf

DOI

10.1109/ISMSS.1991.146278

Filename

146278