• DocumentCode
    3520718
  • Title

    Simulation of a new EEPROM flash memory cell for high density applications

  • Author

    Sabesan, Loganathan ; Amaratunga, Gehan A J

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
  • fYear
    1997
  • fDate
    20-23 Jul 1997
  • Firstpage
    108
  • Lastpage
    111
  • Abstract
    Simulated results of a promising novel structure for a flash EEPROM cell is reported. The study was performed using a 2-D device simulator. The structure is shown to have better performance and robustness with the possibility of fabricating high density modules
  • Keywords
    EPROM; integrated circuit modelling; integrated memory circuits; 2D device simulation; EEPROM flash memory cell; high density module; Aerospace industry; EPROM; Flash memory cells; Logic; Nonvolatile memory; Poisson equations; Rough surfaces; Scattering; Surface roughness; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
  • Conference_Location
    Rochester, NY
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-3790-5
  • Type

    conf

  • DOI
    10.1109/UGIM.1997.616697
  • Filename
    616697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3520718