DocumentCode
3520742
Title
Low-dimensional quantum transport models in atomistic device simulations
Author
Mil´nikov, Gennady ; Mori, Nobuya ; Kamakura, Yoshinari
Author_Institution
Dept. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
315
Lastpage
318
Abstract
The paper presents a method for atomistic quantum transport simulations in nanowire (NW) MOSFETs. The original tight-binding (TBM) Hamiltonian of the nanostructure is replaced with an approximate model which reproduces the transport properties at atomistic level. Small size of the equivalent model (EM) makes the atomistic transport simulation computationally cheap and allows the inelastic scattering effects to be incorporated easily. The method is applied to various p-SiNW and n-SiNW MOSFETs.
Keywords
MOSFET; elemental semiconductors; nanowires; silicon; EM size; NW MOSFET; Si; TBM; atomistic level transport property; atomistic quantum transport simulation; atomistic transport device simulation; equivalent model size; inelastic scattering effect; low-dimensional quantum transport model; nanostructure; nanowire MOSFET; tight-binding Hamiltonian; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035033
Filename
6035033
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