Title :
Low-dimensional quantum transport models in atomistic device simulations
Author :
Mil´nikov, Gennady ; Mori, Nobuya ; Kamakura, Yoshinari
Author_Institution :
Dept. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
Abstract :
The paper presents a method for atomistic quantum transport simulations in nanowire (NW) MOSFETs. The original tight-binding (TBM) Hamiltonian of the nanostructure is replaced with an approximate model which reproduces the transport properties at atomistic level. Small size of the equivalent model (EM) makes the atomistic transport simulation computationally cheap and allows the inelastic scattering effects to be incorporated easily. The method is applied to various p-SiNW and n-SiNW MOSFETs.
Keywords :
MOSFET; elemental semiconductors; nanowires; silicon; EM size; NW MOSFET; Si; TBM; atomistic level transport property; atomistic quantum transport simulation; atomistic transport device simulation; equivalent model size; inelastic scattering effect; low-dimensional quantum transport model; nanostructure; nanowire MOSFET; tight-binding Hamiltonian; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035033
